Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, this resource presents students with the theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, the text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices; bipolar and unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.

S. M. Sze

S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his “fundamental and pioneering contributions to semiconductor devices.” He received his PhD in solid-state electronic from Stanford University in 1963.